Electron microscope study of stackingfault formation in boron implanted silicon-Reference-Cited by-同舟云学术

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Electron microscope study of stackingfault formation in boron implanted silicon

Published:1978-01 Issue:1-2 Volume:36 Page:57-61
ISSN:0033-7579
Container-title:Radiation Effects
language:en
Short-container-title:Radiation Effects

Author:

Comer J. J.

Publisher

Informa UK Limited

Subject

General Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00337577808233171

Reference18 articles.

1. Correlation of electron microscope studies with the electrical properties of boron implanted silicon

2. On the annealing of damage produced by boron ion implantation of silicon single crystals

3. Damage produced by ion mplantation in silicon

4. Wu, Wei-Kuo. 1975.Proceedings Electron Microscopy Society of AmericaEdited by: Bailey, G. W. 166Baton Rouge: Claitors Publishing Div.

5. Transmission electron microscope study of oxidation-induced

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