A three-stage model for the development of secondary defects in ion-implanted silicon
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00337577808233182
Reference25 articles.
1. A model for the build-up of disordered material in ion bombarded Si
2. Effect of irradiation temperature on Si amorphization process
3. DIRECT EVIDENCE OF DIVACANCY FORMATION IN SILICON BY ION IMPLANTATION
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1. Medium energy ion scattering for the characterisation of damage profiles of ultra shallow B implants in Si;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-07
2. Detection of the Defects Induced by Boron High-Energy Ion Implantation of Silicon;Journal of The Electrochemical Society;2000
3. The effect of as-implanted damage on the microstructure of threading dislocations in MeV implanted silicon;Journal of Applied Physics;1999-08
4. Formation of Subthreshold Defects in Erbium Implanted Silicon;MRS Proceedings;1998
5. Metallic Impurity Gettering and Secondary Defect Formation in Megaelectron Volt Self‐Implanted Czochralski and Float‐Zone Silicon;Journal of The Electrochemical Society;1997-08-01
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