Negative resistance and distributed gain in submicron semiconductor diodes using analytical solutions of the Boltzmann transport equation
Author:
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00207218708921000
Reference11 articles.
1. New Negative Conductances in GaAs n+-n-n+Ballistic Diodes
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3. Numerical study of ann‐gallium arsenide diode distributed oscillator
4. Transport equations for electrons in two-valley semiconductors
5. Numerical simulation of hot-electron effects on source-drain burnout characteristics of GaAs power FETs
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