New Negative Conductances in GaAs n+-n-n+Ballistic Diodes-Reference-Cited by-同舟云学术

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New Negative Conductances in GaAs n+-n-n+Ballistic Diodes

Published:1983-04-20 Issue:Part 2, No. 4 Volume:22 Page:L255-L257
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Aishima Asuo,Fukushima Yoshifumi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Small-signal performance of a quantum well diode;IEEE Transactions on Electron Devices;1996-03

2. Negative resistance and distributed gain in submicron semiconductor diodes using analytical solutions of the Boltzmann transport equation;International Journal of Electronics;1987-04

3. On the existence of submillimeter‐wave negative conductance inn‐gallium arsenide diodes;Journal of Applied Physics;1987-03-15

4. Perturbational solutions of the boltzmann transport equation for n+ nn+ structures;IEE Proceedings I Solid State and Electron Devices;1987

5. Numerical study of ann‐gallium arsenide diode distributed oscillator;Journal of Applied Physics;1984-08-15

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