Numerical study of ann‐gallium arsenide diode distributed oscillator
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.334078
Reference17 articles.
1. Transient and steady‐state electron transport properties of GaAs and InP
2. Ballistic transport in semiconductor at low temperatures for low-power high-speed logic
3. Ballistic and near ballistic transport in GaAs
4. On the nature of ballistic transport in short-channel semiconductor devices
5. Single-carrier space-charge controlled conduction vs. ballistic transport in GaAs devices at 77° K
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2. Hydrodynamic analysis of submicrometern+nn+diodes for microwave generators;Applied Physics Letters;1992-09-21
3. Negative resistance and distributed gain in submicron semiconductor diodes using analytical solutions of the Boltzmann transport equation;International Journal of Electronics;1987-04
4. On the existence of submillimeter‐wave negative conductance inn‐gallium arsenide diodes;Journal of Applied Physics;1987-03-15
5. Perturbational solutions of the boltzmann transport equation for n+ nn+ structures;IEE Proceedings I Solid State and Electron Devices;1987
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