New Negative Conductance in GaAs n+-n-n+Ballistic Diode –Time-Dependent Computer Simulation

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New Negative Conductance in GaAs n+-n-n+Ballistic Diode –Time-Dependent Computer Simulation–

Published:1983-12-20 Issue:Part 1, No. 12 Volume:22 Page:1889-1892
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Aishima Asuo,Fukushima Yoshifumi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Negative resistance and distributed gain in submicron semiconductor diodes using analytical solutions of the Boltzmann transport equation;International Journal of Electronics;1987-04

2. On the existence of submillimeter‐wave negative conductance inn‐gallium arsenide diodes;Journal of Applied Physics;1987-03-15

3. Perturbational solutions of the boltzmann transport equation for n+ nn+ structures;IEE Proceedings I Solid State and Electron Devices;1987

4. High-frequency current oscillations in submicron bipolar structures;Solid-State Electronics;1986-12

5. Standing charge density waves driven by electron drift in patterned (Al, Ga)As/GaAs heterostructures;Physica B+C;1985-11

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