High frequency analytical modelling and performance comparison of nanoscale SOI MOS structures-Reference-Cited by-同舟云学术

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High frequency analytical modelling and performance comparison of nanoscale SOI MOS structures

Published:2018-07-11 Issue:11 Volume:105 Page:1945-1961
ISSN:0020-7217
Container-title:International Journal of Electronics
language:en
Short-container-title:International Journal of Electronics

Author:

Rajarajachozhan C.¹,Basanta Singh Nameirakpam²,Deb Sanjoy³

Affiliation:

1. Department of ECE, M.Kumarasamy College of Engineering, Karur, Tamil Nadu, India

2. Department of ECE, Manipur Institute of Technology, Imphal, Manipur, India

3. Department of ECE, Bannari Amman Institute of Technology, Sathyamangalam, Tamil Nadu, India

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/00207217.2018.1494325

Reference29 articles.

1. Analytical drain current model for nanoscale strained‐Si/SiGe MOSFETs

2. Compact Mosfet Models for VLSI Design

3. CMOS: Devices and Future Challenges

4. Investigation of the Novel Attributes of a Fully Depleted Dual-Material Gate SOI MOSFET

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Complete Analytical RF Model for Nanoscale Semiconductor-On-Insulator MOSFET;Silicon;2022-11-28

2. Analysis of Underlap Strained Silicon on Insulator MOSFET for Accurate and Compact Modeling;Silicon;2021-03-23

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