Investigation of the Novel Attributes of a Fully Depleted Dual-Material Gate SOI MOSFET-Reference-Cited by-同舟云学术

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Investigation of the Novel Attributes of a Fully Depleted Dual-Material Gate SOI MOSFET

Published:2004-09 Issue:9 Volume:51 Page:1463-1467
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:en
Short-container-title:IEEE Trans. Electron Devices

Author:

Chaudhry A.,Kumar M.J.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/29334/01325851.pdf?arnumber=1325851

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