Design of quaternary logic circuit using quantum dot gate-quantum dot channel FET (QDG–QDCFET)
Author:
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00207217.2013.854549
Reference14 articles.
1. Resonant tunneling transistor with quantum well base and high‐energy injection: A new negative differential resistance device
2. Nonvolatile Memory Effect in Indium Gallium Arsenide-Based Metal–Oxide–Semiconductor Devices Using II–VI Tunnel Insulators
3. Nonvolatile Silicon Memory Using GeO x -Cladded Ge Quantum Dots Self-Assembled on SiO2 and Lattice-Matched II–VI Tunnel Insulator
4. Quantum Dot Channel (QDC) Field-Effect Transistors (FETs) Using II–VI Barrier Layers
5. Novel Quantum Dot Gate FETs and Nonvolatile Memories Using Lattice-Matched II–VI Gate Insulators
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