Quantum Dot Channel (QDC) Field-Effect Transistors (FETs) Using II–VI Barrier Layers-Reference-Cited by-同舟云学术

Quantum Dot Channel (QDC) Field-Effect Transistors (FETs) Using II–VI Barrier Layers

Published:2012-06-23 Issue:10 Volume:41 Page:2775-2784
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Jain F.,Karmakar S.,Chan P.-Y.,Suarez E.,Gogna M.,Chandy J.,Heller E.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-012-2161-z.pdf

Reference36 articles.

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3. J.-H. Park, M. Tada, D. Kuzum, P. Kapur, H.-Y. Yu, H.S.P. Wong, and K.C. Saraswat, International Electron Devices Meeting (IEDM) (2008), p. 389.

4. J. Lin, S. Lee, H.-J.Oh, W. Yang, G.Q. Lo, D.L. Kwong, and D.Z. Chi, International Electron Devices Meeting (IEDM) (2008), p. 401.

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