Enhancing Number of Bits Via Mini-Energy Band Transitions Using Si Quantum Dot Channel (QDC) and Ge Quantum Dot Gate (QDG) FETs and NVRAMs-Reference-Cited by-同舟云学术

Enhancing Number of Bits Via Mini-Energy Band Transitions Using Si Quantum Dot Channel (QDC) and Ge Quantum Dot Gate (QDG) FETs and NVRAMs

Published:2023-07-20 Issue:02n04 Volume:32 Page:
ISSN:0129-1564
Container-title:International Journal of High Speed Electronics and Systems
language:en
Short-container-title:Int. J. Hi. Spe. Ele. Syst.

Author:

Jain F.¹,Gudlavalleti R. H.¹,Almalki A.¹,Saman B.²,Chan P-Y.¹,Chandy J.¹,Papadimitrakopoulos F.¹,Heller E.³

Affiliation:

1. University of Connecticut, CT, USA

2. Taif University, SA, Saudi Arabia

3. Synopysis Inc., Ossining, NY, USA

Abstract

This paper presents multi-state QDC-QDG FET structures that has the potential to introduce additional states (8 or 16) by utilizing additional mini-energy sub-bands. Mini-energy bands are formed in Si quantum dot channel (QDC) comprising two silicon oxide cladded Si quantum dots (QDs). Quantum simulations are presented to show more states when additional two germanium oxide cladded Ge dots are added on top of two Si QD layers in the gate region. With the addition of a control gate oxide layer, we transform the QDC-QDG-FET into a quantum dot (QD) nonvolatile random access memory (NVRAM). Quantum simulations are presented.

Publisher

World Scientific Pub Co Pte Ltd

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electronic, Optical and Magnetic Materials

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0129156423500180

Reference11 articles.

1. Quantum Dot Channel (QDC) Field-Effect Transistors (FETs) Using II–VI Barrier Layers

2. Quantum Dot Channel (QDC) FETs with Wraparound II–VI Gate Insulators: Numerical Simulations

3. Analysis of In0.52Al0.48As/In0.53Ga0.47As/InP quantum wire MODFETs employing coupled well channels

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Novel Multi-State QDC-QDG FETs and Gate All Around (GAA) FETs for Integrated Logic and QD-NVRAMs;International Journal of High Speed Electronics and Systems;2023-07-20