SI/GE Quantum Dot Channel FETs for Multi-Bit Computing

Abstract

This paper presents quantum dot channel (QDC) FETs in quantum wire and coupled quantum dot configurations for cryogenic operation with multi-state operation. It also describes gate-all-around (GAA) quantum dot channel (QDC) FETs that exhibit potential multi-state characteristics at room temperature. FETs with cladded Si and Ge quantum dot layers as a transport channel have been fabricated. The formation of a quantum dot superlattice (QDSL) when SiOx-cladded Si and/or GeOx-cladded Ge quantum dots (QD) are assembled results in mini-energy sub-bands in the conduction and valence band. The intra-mini-energy band transitions results in significant changes in the drain current when gate and/or drain voltages are varied. This novel feature provides a pathway for 16-/32-state logic in CMOS-X configuration. The gate-defined Si quantum dot FETs, comprising of tunnel barrier coupled, have been reported for quantum computing at cryogenic temperatures.