Nonvolatile Memory Effect in Indium Gallium Arsenide-Based Metal–Oxide–Semiconductor Devices Using II–VI Tunnel Insulators-Reference-Cited by-同舟云学术

Nonvolatile Memory Effect in Indium Gallium Arsenide-Based Metal–Oxide–Semiconductor Devices Using II–VI Tunnel Insulators

Published:2011-05-06 Issue:8 Volume:40 Page:1685-1688
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Chan P.-Y.,Gogna M.,Suarez E.,Karmakar S.,Al-Amoody F.,Miller B. I.,Jain F. C.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-011-1655-4.pdf

Reference10 articles.

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3. J. Huang, N. Goel, H. Zhao, C.Y. Kang, K.S. Min, G. Bersuker, S. Oktyabrsky, C.K. Gaspe, M.B. Santos, P. Majhi, P.D. Kirsch, H.-H. Tseng, J.C. Lee, and R. Jammy, IEDM (2009), p. 1.

4. Y.Q. Wu, R.S. Wang, T. Shen, J.J. Gu, and P.D. Ye, IEDM (2009), p. 1.

5. F.C. Jain, E. Suarez, M. Gogna, F. Al-Amoody, D. Butkiewicus, R. Hohner, T. Liaskas, S. Karmakar, P.-Y. Chan, B. Miller, J. Chandy, and E. Heller, J. Electron. Mater. 38, 1574 (2009).

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