Quantum Dot Channel (QDC) Field Effect Transistors (FETs) Configured as Floating Gate Nonvolatile Memories (NVMs)-Reference-Cited by-同舟云学术

Quantum Dot Channel (QDC) Field Effect Transistors (FETs) Configured as Floating Gate Nonvolatile Memories (NVMs)

Published:2017-06-27 Issue:03 Volume:26 Page:1740015
ISSN:0129-1564
Container-title:International Journal of High Speed Electronics and Systems
language:en
Short-container-title:Int. J. Hi. Spe. Ele. Syst.

Author:

Kondo Jun¹,Lingalugari Murali¹,Mirdha Pial¹,Chan Pik-Yiu¹,Heller Evan²,Jain Faquir¹

Affiliation:

1. Electrical and Computer Engineering, University of Connecticut, 371 Fairfield Way, Unit 4157, Storrs, CT 06269, USA

2. Synopsis Inc., Ossining, NY 10562, USA

Abstract

This paper presents quantum dot channel (QDC) Field Effect Transistors (FETs) which are configured as nonvolatile memories (NVMs) by incorporating cladded GeOx-Ge quantum dots in the floating gates as well as the transport channels. The current flow and the threshold characteristics were significantly improved when the gate dielectric was changed from silicon dioxide (SiO2) to hafnium aluminum oxide (HfAlO2), and the control dielectric was changed from silicon nitride (Si3N4) to hafnium aluminum oxide (HfAlO2). The device operations are explained by carrier transport in narrow energy mini-bands which are manifested in a quantum dot transport channel.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electronic, Optical and Magnetic Materials

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0129156417400158

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