Nonvolatile Silicon Memory Using GeO x -Cladded Ge Quantum Dots Self-Assembled on SiO2 and Lattice-Matched II–VI Tunnel Insulator-Reference-Cited by-同舟云学术

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Nonvolatile Silicon Memory Using GeO x -Cladded Ge Quantum Dots Self-Assembled on SiO2 and Lattice-Matched II–VI Tunnel Insulator

Published:2011-06-15 Issue:8 Volume:40 Page:1769-1774
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Gogna M.,Suarez E.,Chan P.-Y.,Al-Amoody F.,Karmakar S.,Jain F.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-011-1685-y.pdf

Reference8 articles.

1. H.A.R. Wegener, IEDM Tech. Dig. 70 (1967)

2. S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E.F. Crabbe, and K. Chan, Appl. Phys. Lett. 68, 1377 (1996).

3. F.C. Jain and F. Papadimitrakopoulos, Patent # 7,368,370 (2008).

4. F.C. Jain, E. Suarez, M. Gogna, F. Alamoody, D. Butkiewicus, R. Hohner, T. Liaskas, S. Karmakar, P.-Y. Chan, B. Miller, J. Chandy, and E. Heller, JEM 28, 1574 (2009).

5. E. S. Hasaneen, E. Heller, R. Bansal, W. Huang, and F. Jain, Solid-State Electron. 48, 2055 (2004).

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