Analytical threshold voltage and subthreshold swing model for TMG FinFET
Author:
Affiliation:
1. Electronics and Communication Engineering Department, Vellore Institute of Technology Andhra Pradesh, Amravati, India
2. Electronics and Communication Engineering Department, National Institute of Technology Silchar, Silchar, India
Funder
Council of Scientific and Industrial Research
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/00207217.2018.1545258
Reference34 articles.
1. Two-Dimensional Analytical Threshold Voltage and Subthreshold Swing Models of Undoped Symmetric Double-Gate MOSFETs
2. Device scaling limits of Si MOSFETs and their application dependencies
3. 2-D Analytical Modeling of Threshold Voltage for Graded-Channel Dual-Material Double-Gate MOSFETs
4. Metal Gate Work Function Engineering on Gate Leakage of MOSFETs
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