Temperature Effect on Analog/RF and Linearity Parameters of Stacked Oxide TMG FinFET

Author:

Yadav Dharmendra Singh,Saraswat Somya

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Reference24 articles.

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4. Roy K, Mukhopadhyay S, Mahmoodi-Meimand H (2003) . Proc IEEE 91(2):305

5. Kumar S, Yadav DS, Saraswat S, Parmar N, Sharma R, Kumar A (2020) .. In: 2020 IEEE International Students’ Conference on Electrical, Electronics and Computer Science (SCEECS). IEEE, pp 1–6

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1. Influence of Temperature Fluctuations on the Analog and RF Characteristics of Gate-Engineered High-K Gate Dielectric Stack SOI Fin-FET;2023 IEEE 3rd International Conference on Applied Electromagnetics, Signal Processing, & Communication (AESPC);2023-11-24

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