A comprehensive analytical subthreshold swing (S) model for double-gate MOSFETs-Reference-Cited by-同舟云学术

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A comprehensive analytical subthreshold swing (S) model for double-gate MOSFETs

Published:2002-06 Issue:6 Volume:49 Page:1086-1090
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:en
Short-container-title:IEEE Trans. Electron Devices

Author:

Qiang Chen ,Agrawal B.,Meindl J.D.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/21668/01003757.pdf?arnumber=1003757

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