3D Analytical Modeling of Potential, Drain Current, and Threshold Characteristics for Long-Channel Square Gate-All-Around (SGAA) MOSFETs

Author:

Abdelhamid Hamdy,Anis Azza M.,Aboulwafa Mohamed E.,Eladawy Mohamed I.

Publisher

Springer International Publishing

Reference50 articles.

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3. Collaert, N. (2016). Device architectures for the 5nm technology node and beyond. Taiwan: Semicon.

4. Asenov, A., Wang, Y., Cheng, B., Wang, X., Asenov, P., Al-Ameri, T., & Georgiev, V.P. (2016). Nanowire transistor solutions for 5nm and beyond. In: 17th International Symposium on Quality Electronic Design (ISQED), Santa Clara, CA, USA. pp. 269–274.

5. Nagy, D., Indalecio, G., García-Loureiro, A. J., Elmessary, M. A., Kalna, K., & Seoane, N. (2018). FinFET versus gate-all-around nanowire FET: Performance, scaling, and variability. Journal of the Electron Devices Society, 6, 332–340.

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