Current–voltage characteristics of Schottky diode simulated using semiconductor device equations
Author:
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00207217.2012.720946
Reference27 articles.
1. Electron and hole mobilities in silicon as a function of concentration and temperature
2. Temperature-dependent behavior of Ti/p-InP/ZnAu Schottky barrier diodes
3. Temperature dependence of current–voltage characteristics of Sn/p-Si Schottky contacts
4. Temperature dependence of forward current characteristics of GaN junction and Schottky rectifiers
5. Correlation between barrier heights and ideality factors of H-terminated Sn/p-Si(100) Schottky barrier diodes
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