Numerical Simulation and Parameter Extraction of Pure Thermionic Emission Across Schottky Contacts-Reference-Cited by-同舟云学术

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Numerical Simulation and Parameter Extraction of Pure Thermionic Emission Across Schottky Contacts

Published:2022-12-11 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Conference on Emerging Electronics (ICEE)
language:
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Author:

Devi A. V. Nandini¹,Bhargav P. N. Sai¹,Khandelwal Sourabh²,Gurugubelli Vijaya Kumar³,Karmalkar Shreepad¹

Affiliation:

1. Indian Institute of Technology Madras,Department of Electrical Engineering,Chennai,India

2. Indian Institute of Technology Tirupati,Department of Electrical Engineering,Tirupati,India

3. School of Engineering, Macquarie University,Sydney,Australia

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10117590/10117577/10117821.pdf?arnumber=10117821

Reference13 articles.

1. Current transport in metal-semiconductor barriers

2. Low Schottky barrier height for silicides on n-type Si (100) by interfacial selenium segregation during silicidation

3. VerticaIP-Type Gan Schottky Barrier Diodes with Nearly Ideal Thermionic Emission Characteristics;ueno;Appl Phys Lett,2021

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