Low Schottky barrier height for silicides on n-type Si (100) by interfacial selenium segregation during silicidation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2970958
Reference17 articles.
1. Sub-0.1-eV Effective Schottky-Barrier Height for NiSi on n-Type Si (100) Using Antimony Segregation
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