Improvement of contact resistivity of titanium silicide on P-doped epitaxial Si using a Se interlayer-Reference-Cited by-同舟云学术

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Improvement of contact resistivity of titanium silicide on P-doped epitaxial Si using a Se interlayer

Published:2020-10-27 Issue:11 Volume:13 Page:111004
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Park Seran,Choi Jeong-Min,Shin Hyunsu,Ko Eunjung,Ko Dae-Hong

Funder

Samsung

National Research Foundation of Korea

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

https://iopscience.iop.org/article/10.35848/1882-0786/abbfe0/pdf

Reference30 articles.

1. Sub- $10^{-9}~\Omega $ -cm2 n-Type Contact Resistivity for FinFET Technology

2. Challenges and Limitations of CMOS Scaling for FinFET and Beyond Architectures

3. Epitaxial Growth of Ga-doped SiGe for Reduction of Contact Resistance in finFET Source/Drain Materials

4. Experimental demonstration on the ultra-low source/drain resistance by metal-insulator-semiconductor contact structure in In0.53Ga0.47As field-effect transistors

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design and reliability assessment of an ultra-thin body electrostatically doped bipolar transistor for mixed signal applications;Memories - Materials, Devices, Circuits and Systems;2024-08

2. Enhanced Thermal Stability and Reduced Specific Contact Resistivity in Titanium-Based Ohmic Contact With an Ultra-Thin Molybdenum Interlayer;IEEE Electron Device Letters;2024-07

3. Process optimization of titanium self-aligned silicide formation through evaluation of sheet resistance by design of experiment methodology;Solid-State Electronics;2024-05

4. Minimizing Defect on Ti Thin Film Laser Ablation using Square Flat-top NIR Femtosecond Laser for Thin Film Transistor of µ-LED Repair;Journal of Laser Micro/Nanoengineering;2023-11

5. Excellent Improvement of Contact Resistivity and Thermal Stability for High Temperature Process After Silicidation of TiSi₂ Through Ta Interlayer for Diffusion Barrier;IEEE Electron Device Letters;2023-07

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