Temperature dependence of forward current characteristics of GaN junction and Schottky rectifiers-Reference-Cited by-同舟云学术

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Temperature dependence of forward current characteristics of GaN junction and Schottky rectifiers

Published:2003-09 Issue:9 Volume:47 Page:1533-1538
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Baik K.H.,Irokawa Y.,Ren F.,Pearton S.J.,Park S.S.,Park Y.J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference37 articles.

1. Applications Of High Power Electronic Switches In The Electric Power Utility Industry And The Needs For High Power Switching Devices

2. Performance evaluation of high-power wide band-gap semiconductor rectifiers

3. Fabrication and performance of GaN electronic devices

4. High voltage (450 V) GaN Schottky rectifiers

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2. Effect of temperature on forward and reverse bias characteristics of GaN based Schottky diode;Materials Today: Proceedings;2023

3. Influence of the thickness of frontal platinum metallic layer on the electro-optical characteristics of GaN-based Schottky ultraviolet photodetectors;Semiconductor Physics, Quantum Electronics and Optoelectronics;2022-10-06

4. Design and simulation of gallium nitride trench MOSFETs for applications with high lifetime demand;Journal of Computational Electronics;2021-07-02

5. The Effect of RF Sputtering Temperature Conditions on the Structural and Physical Properties of Grown SbGaN Thin Film;Coatings;2021-06-23

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