Synaptic memristors based on BaTiO<sub>3</sub> thin films irradiated by swift heavy ions for neuromorphic computing-Reference-Cited by-同舟云学术

Synaptic memristors based on BaTiO₃ thin films irradiated by swift heavy ions for neuromorphic computing

Published:2024 Issue: Volume: Page:
ISSN:2051-6347
Container-title:Materials Horizons
language:en
Short-container-title:Mater. Horiz.

Author:

Xu Minghui¹,Liu Tao¹,Li Hailian¹,Liu Yong²,Shan Pengshun¹,Wang Ruowei¹,Kong Weijin¹,Zhang Minghao¹,Fan Shuangqing¹^ORCID,Su Jie¹³^ORCID

Affiliation:

1. College of Electronic and Information Engineering, College of Physics Science, Qingdao University, Qingdao 266071, China

2. School of Energy and Power Engineering, Shandong University, Jinan 250061, China

3. National Laboratory of Solid State Microstructures, Physics Department, Nanjing University, Nanjing 210093, China

Abstract

We report the artificial synaptic plasticity of BTO-based memristors and its application to artificial neural network computation by using swift heavy-ion irradiation as a tool for tuning the defects in the BTO layer.

Funder

Natural Science Foundation of Shandong Province

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/MH/D4MH00716F

Reference41 articles.

1. Enhancement of photoelectric properties of Cu2ZnSnS4 thin films by electronic excitations induced by swift heavy ions

2. Anomalous structural phase transformation in swift heavy ion-irradiated δ-Sc₄Hf₃O₁₂

3. Nanorod orientation control by swift heavy ion irradiation

4. Structural and Electrical Response of Emerging Memories Exposed to Heavy Ion Radiation

5. Swift heavy ion irradiation of polyaniline-graphene nanocomposite films: Structural and optical properties