Structural and electrical properties of metal-ferroelectric-silicon heterostructure fabricated by a direct wafer bonding and layer transfer process-Reference-Cited by-同舟云学术

Structural and electrical properties of metal-ferroelectric-silicon heterostructure fabricated by a direct wafer bonding and layer transfer process

Published:1999-03 Issue:1 Volume:225 Page:75-82
ISSN:0015-0193
Container-title:Ferroelectrics
language:en
Short-container-title:Ferroelectrics

Author:

Alexe M.,Senz St.,Pignqlet A.,Hesse D.,Gösele U.

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://www.tandfonline.com/doi/pdf/10.1080/00150199908009113

Reference15 articles.

1. Memory retention and switching behavior of metal-ferroelectric-semiconductor transistors

2. Characteristics of Metal/Ferroelectric/Insulator/Semiconductor Field Effect Transistors Using a Pt/SrBi2Ta2O9/Y2O3/Si Structure

3. Hysteresis characteristics of vacuum-evaporated ferroelectric PbZr0.4Ti0.6O3 films on Si(111) substrates using CeO2 buffer layers

4. Pignolet, A., Curran, C., Alexe, M., Senz, St., Hesse, D. and Gosele, U. 1998. 10thInt. Symp. on Integrated Ferroelectrics (ISIF 98). March 1–41998. USA: Monterey CA Integrated Ferroelectrics in press.

5. Ferroelectric-semiconductor heterostructures obtained by direct wafer bonding

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Temperature induced change in the hysteretic behavior of the capacitance-voltage characteristics of Pt–ZnO–Pb(Zr0.2Ti0.8)O3–Pt heterostructures;Applied Physics Letters;2010-01-04

2. Investigation of domain related topography formation during chemical mechanical polishing of piezoelectric ceramic material;Materials Science and Technology;2009-11

3. Microstructure of (104)-oriented Bi3.25La0.75Ti3O12 and Bi3.54Nd0.46Ti3O12 ferroelectric thin films on multiply twinned SrRuO3/Pt(111) electrodes on YSZ(100)-buffered Si(100);physica status solidi (a);2005-09

4. Wafer Bonding of Ferroelectric Materials;Wafer Bonding;2004

5. Ferroelectricity in epitaxial pulsed laser deposited bismuth-layered perovskite thin films of different crystallographic orientations;Ferroelectrics;2001-01