Temperature induced change in the hysteretic behavior of the capacitance-voltage characteristics of Pt–ZnO–Pb(Zr0.2Ti0.8)O3–Pt heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3284659
Reference21 articles.
1. Formation and characteristics of Pb(Zr,Ti)O3 field-effect transistor with a SiO2 buffer layer
2. Integration of ferroelectric thin films into nonvolatile memories
3. Electrical characteristics of excimer laser ablated bismuth titanate films on silicon
4. Fabrication and properties of silicon-based PZT thin films for MFSFET applications
5. Effects of coercive voltage and charge injection on memory windows of metal-ferroelectric-semiconductor and metal-ferroelectric-insulator-semiconductor gate structures
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4. Polarization and charge carrier density coupling in epitaxial PbZr0.2Ti0.8O3/ZnO heterostructures;Journal of Applied Physics;2018-10-28
5. Room-temperature relaxor ferroelectricity and photovoltaic effects in tin titanate directly deposited on a silicon substrate;Physical Review B;2018-02-20
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