Transmission electron microscope study of a threading dislocation with and its effect on leakage in a 4H–SiC MOSFET
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics
Link
http://www.tandfonline.com/doi/pdf/10.1080/09500839.2013.798047
Reference13 articles.
1. Growth mechanism of 6H‐SiC in step‐controlled epitaxy
2. Correlation between Surface Morphological Defects and Crystallographic Defects in SiC
3. Influence of Threading Dislocations on Lifetime of Gate Thermal Oxide
4. Stacking faults created by the combined deflection of threading dislocations of Burgers vector c and c+a during the physical vapor transport growth of 4H–SiC
5. Transmission Electron Microscopy Analysis of a Threading Dislocation with $c+a$ Burgers Vector in 4H-SiC
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1. Analysis of local strain fields around individual threading dislocations in GaN substrates by nanobeam x-ray diffraction;Journal of Applied Physics;2024-06-11
2. 3D structure of threading screw dislocation at a deep location in 4H-SiC using 3D micro-X-ray topography;Japanese Journal of Applied Physics;2024-01-04
3. Non-destructive identification of edge-component burgers vector of threading dislocations in SiC wafers by birefringence imaging;Diamond and Related Materials;2023-10
4. Nucleation of Threading Dislocations in 4H-SiC at Early Physical-Vapor-Transport Growth Stage;Crystal Growth & Design;2023-06-05
5. Dislocation-related leakage-current paths of 4H silicon carbide;Frontiers in Materials;2023-01-12
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