Thermal redistribution of indium in amorphous silicon layers
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/01422448108226845
Reference11 articles.
1. Observation of ion bombardment damage in silicon
2. Regrowth behavior of ion‐implanted amorphous layers on 〈111〉 silicon
3. Chaneling effect measurements of the recrystallization of amorphous Si layers on crystal Si
4. Reordering of amorphous layers of Si implanted with31P,75As, and11B ions
5. Influence of16O,12C,14N, and noble gases on the crystallization of amorphous Si layers
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Rapid thermal annealing of indium‐implanted silicon single crystals;Journal of Applied Physics;1989-06
2. Diffusion of impurities in amorphous silicon;Physical Review B;1988-09-15
3. Diffusion of In and Pt in melt-quenched amorphous silicon at T⩽300 degrees C;Semiconductor Science and Technology;1988-09-01
4. Bulk unipolar camel diodes formed using indium implantation into silicon;IEEE Electron Device Letters;1985-11
5. Diffusion and precipitation in amorphous Si;Applied Physics Letters;1985-03
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