Substitutional donor related states and Au/Ge/Ni contacts to AlxGa1−xAs-Reference-Cited by-同舟云学术

Substitutional donor related states and Au/Ge/Ni contacts to AlxGa1−xAs

Published:1993-11 Issue:5 Volume:68 Page:727-735
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Scalvi Luis V. A.¹,Degani Marcos H.²

Affiliation:

1. a Departamento de Física , UNESP-Bauru , C.P. 473, 17033 , Bauru , SP , Brazil

2. b Departamento de Física e Ciěncia dos Materiais , Instituto de Física e Química de São , Carlos-U.S.P.-Caixa Postal 369, 13560 , São Carlos , SP , Brazil

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642819308220155

Reference21 articles.

1. Improvements in the topography of AuGeNi-based ohmic contacts to n-GaAs

2. Theory of the Atomic and Electronic Structure ofDXCenters in GaAs andAlxGa1−xAsAlloys

3. Comprehensive analysis of Si-dopedAlxGa1−xAs(x=0 to 1): Theory and experiments

4. Electron trapping by metastable effective-mass states ofDXdonors in indirect-band-gapAlxGa1−xAs:Te

5. Photoionization of theDX(Te) centers inAlxGa1−xAs: Evidence for a negative-Ucharacter of the defect

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