Improvements in the topography of AuGeNi-based ohmic contacts to n-GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. Ohmic contacts to GaAs
2. Microstructure studies of AuNiGe Ohmic contacts to n-type GaAs
3. Extremely Low Resistance Ohmic Contacts to n-GaAs for AlGaAs/GaAs Heterojunction Bipolar Transistors
4. Redistribution of aluminum in MODFET ohmic contacts
5. Structure and lateral diffusion of ohmic contacts in AlGaAs/GaAs high electron mobility transistors and GaAs devices
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1. Thermal Annealing Effects on I-V-T Characteristics of Pd/Ge/Ti/Pt/Au-Si-Gaas Contact at High Temperatures;SSRN Electronic Journal;2022
2. Superconductivity in AuNiGe Ohmic contacts to a GaAs-based high mobility two-dimensional electron gas;Applied Physics Letters;2020-10-19
3. Evolution of surface morphology of alloyed AuGe/Ni/Au ohmic contacts to GaAs microwave FETs;Materials Science in Semiconductor Processing;2015-02
4. Investigation on the effect of annealing process parameters on AuGeNi ohmic contact to n-GaAs using microstructural characteristics;Microelectronics Reliability;2011-08
5. Influence of Nickel layer thickness on the magnetic properties and contact resistance of AuGe/Ni/Au Ohmic contacts to GaAs/AlGaAs heterostructures;Journal of Physics D: Applied Physics;2009-06-01
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