Extremely Low Resistance Ohmic Contacts to n-GaAs for AlGaAs/GaAs Heterojunction Bipolar Transistors-Reference-Cited by-同舟云学术

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Extremely Low Resistance Ohmic Contacts to n-GaAs for AlGaAs/GaAs Heterojunction Bipolar Transistors

Published:1984-08-20 Issue:Part 2, No. 8 Volume:23 Page:L635-L637
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ito Hiroshi,Ishibashi Tadao,Sugeta Takayuki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ni/Ti/Pt ohmic contacts to p-GaAs for the heterojunction bipolar transistor process;Electronics Letters;1996

2. Refractory metal-based low-resistance ohmic contacts for submicron GaAs heterostructure devices;Thin Solid Films;1995-02

3. Au-Ge-Ni-Ti Ohmic Contacts on Gallium Arsenide;MRS Proceedings;1990

4. The Effects of Ion Beam Mixing on Rapid Thermal Annealed Ohmic Contacts to N-GaAs;MRS Proceedings;1990

5. Chapter 5 Hetero-Bipolar Transistor and Its LSI Application;Very High Speed Integrated Circuits: Heterostructure;1990

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