Safe hole traps—a source of metastable light-induced dangling bonds in a-Si:H
Author:
Affiliation:
1. a Solar Energy Research Institute , Golden , Colorado, 80401 , U.S.A.
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642819008208645
Reference22 articles.
1. Light‐induced dangling bonds in hydrogenated amorphous silicon
2. The thermal quenching and supralinearity of photoconductivity in hydrogenated amorphous silicon
3. Energy dependence of the optical matrix element in hydrogenated amorphous and crystalline silicon
4. Effect of temperature during illumination on annealing of metastable dangling bonds in hydrogenated amorphous silicon
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1. A comparative study for metastable defect creation and annealing kinetics and their relation to photoconductivity in a-Si1−xCx:H;Journal of Non-Crystalline Solids;2003-06
2. Modelling the effects of texture on the statistics of stage I fatigue crack growth;Philosophical Magazine A;2001-04
3. Resistance fluctuations in hydrogenated amorphous silicon: Nonthermal equilibrium;Physical Review B;1998-08-15
4. Sublinear photoconductivity in n-type a-Si:H — analysis and computer modelling;Journal of Non-Crystalline Solids;1996-05
5. Experimental Evidence for the Applicability of an Effective Temperature Concept ina−Si:H;Physical Review Letters;1994-12-05
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