A comparative study for metastable defect creation and annealing kinetics and their relation to photoconductivity in a-Si1−xCx:H-Reference-Cited by-同舟云学术

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A comparative study for metastable defect creation and annealing kinetics and their relation to photoconductivity in a-Si1−xCx:H

Published:2003-06 Issue:1-2 Volume:321 Page:103-109
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Kodolbaş Alp Osman,Öktü Özcan

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Proceedings of the 7th International School on Condensed Matter Physics––Varna’92;Adriaenssens,1993

2. Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study

3. Hydrogen collision model: Quantitative description of metastability in amorphous silicon

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Deposition of highly photoconductive wide band gap a-SiO:H thin films at a high temperature without H-dilution;Solar Energy Materials and Solar Cells;2005-10-14

2. Lateral photovoltage measurements in hydrogenated amorphous silicon and silicon-oxygen thin films;Journal of Non-Crystalline Solids;2005-03

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