The thermal quenching and supralinearity of photoconductivity in hydrogenated amorphous silicon
Author:
Affiliation:
1. a Institute of Physics, Academia Sinica , P.O. Box 603, Beijing , P.R. China
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/01418638608244291
Reference18 articles.
1. Analysis of photoconductivity applied to cadmium-sulfide-type photoconductors
2. New features of the temperature dependence of photoconductivity in plasma‐deposited hydrogenated amorphous silicon alloys
3. Photoconductivity and recombination in amorphous silicon alloys
4. Study of light-induced creation of defects in a-Si:H by means of single and dual-beam photoconductivity
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1. Sensitization of the electron lifetime ina-Si:H: The story of oxygen;Physical Review B;2001-02-26
2. Light-induced structural changes and their correlation to metastable defect creation in intrinsic hydrogenated amorphous silicon films;Physical Review B;2000-09-15
3. On thermal quenching of the photoconductivity in hydrogenated amorphous silicon;Philosophical Magazine B;1995-07
4. Calculation of electronic potential energy distributions and photoconductivity in hydrogenated amorphous silicon/hydrogenated amorphous silicon nitride superlattices;Philosophical Magazine B;1994-08
5. Light-induced changes in the photoconductivity of rapidly-deposited hydrogenated amorphous silicon films;Thin Solid Films;1994-01
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