Composition measurement by thickness fringe matching: The alloy-system-dependent sensitvity and accuracy of the method
Author:
Affiliation:
1. a University of Cambridge, Department of Materials Science and Metallurgy , Pembroke Street, Cambridge , CB2 3QZ , England
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642819108205944
Reference7 articles.
1. GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications
2. Compositional Studies of Semiconductor Alloys by Bright Field Electron Microscope Imaging of Wedged Crystals
3. Eaglesham , D. J. and Humphreys , C. J. 11th International Conference on Electron Microscopy. Kyoto. Edited by: Imura , T. Maruse , S. and Suzuki , T. pp.209Tokyo: Japanese Society for Electron Microscopy.
4. Composition Dependence of Equal Thickness Fringes in an Electron Microscope Image of GaAs/AlxGa1-xAs Multilayer Structure
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Chemical microanalysis of semiconductor heterostructures by thickness fringe imaging;Micron;1993-01
2. Intrinsic Strain at Slightly Mismatched InGaAs/InP Interfaces as Studied by Transmission Electron Microscopy;Physica Status Solidi (a);1992-02-16
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