Common and unique aspects of perovskite thin film CVD processes-Reference-Cited by-同舟云学术

Common and unique aspects of perovskite thin film CVD processes

Published:1998-09 Issue:1-4 Volume:21 Page:273-289
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Buskirk Peter C Van¹,Roeder Jeffrey F.¹,Baum Thomas H.¹,Bilodeau Steven M.¹,Russell Michael W.¹,Johnston Stephen T.¹,Carl Ralph J.¹,Desrochers Deborah J.¹,Hendrix Bryan C.¹,Hintermaier Frank²

Affiliation:

1. a ATMI Inc , Danbury , CT , USA

2. b Siemens AG , Munich , Germany

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589808202070

Reference42 articles.

1. TdI10: Ferroelectric thin films in integrated microelectronic devices

2. FRAM-the ultimate memory

3. Quantum jumps in FeRAM technology and performance

4. High quality lead zirconate titanate films grown by organometallic chemical vapour deposition

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