Ferroelectric random access memory (FRAM) devices-Reference-Cited by-同舟云学术

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Ferroelectric random access memory (FRAM) devices

Published:2014 Issue: Volume: Page:434-454
ISSN:
Container-title:Advances in Non-volatile Memory and Storage Technology
language:
Short-container-title:

Author:

Eshita T.,Tamura T.,Arimoto Y.

Publisher

Elsevier

Reference75 articles.

1. An electrostatically induced permanent memory;Pulvari;J. Appl. Phys.,1951

2. Semiconductive translating device;Ross,1955

3. An experimental 512-bit non-volatile memory with ferroelectric storage cell;Evans;IEEE J, Solid-St. Circ.,1988

4. A ferroelectric non-volatile memory;Eaton,1988

5. A single-transistor ferroelectric memory cell;Nakamura,1995

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