In-situ determination of potential profiles in a-Si: H-Reference-Cited by-同舟云学术

In-situ determination of potential profiles in a-Si: H

Published:1986-08 Issue:2 Volume:54 Page:L57-L62
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Siefert J. M.¹,Rosny G. de¹

Affiliation:

1. a Equipe Synthèse de Couches Minces pour l'Energétique (ER 258), Laboratoire de Physique Nucléaire des Hautes Energies, Ecole Polytechnique , 91128 , Palaiseau , Cedex , France

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642818608239003

Reference18 articles.

1. The relation between contact potential and planar conduction as a-Si : H films undergo gas adsorption or temperature changes

2. Silane dissociation mechanisms and thin film formation in a low pressure multipole dc discharge

3. Growth of hydrogenated amorphous silicon due to controlled ion bombardment from a pure silane plasma

4. Density-of-states distribution in the mobility gap of a-Si:H

5. Optical absorption spectra of surface or interface states in hydrogenated amorphous silicon

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1. Investigation of the microstructure and optical properties of hydrogenated polymorphous silicon films prepared with pure silane;Philosophical Magazine;2007-12-11

2. Contact potential measurements with a local Kelvin probe;Philosophical Magazine B;2002-07

3. Mobility-edge shift during diborane doping in hydrogenated amorphous silicon and hydrogenated amorphous silicon carbide;Philosophical Magazine B;2000-07

4. In-situ Kelvin probe and ellipsometry study of the doping of a-Si:H and a-SiC:H layers:;Solar Energy Materials and Solar Cells;1998-02

5. Quantitative in-situ Kelvin probe study of boron doping in hydrogenated amorphous silicon and hydrogenated amorphous silicon carbide;Philosophical Magazine B;1997-12