The relation between contact potential and planar conduction as a-Si : H films undergo gas adsorption or temperature changes-Reference-Cited by-同舟云学术

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The relation between contact potential and planar conduction as a-Si : H films undergo gas adsorption or temperature changes

Published:1983 Issue:8 Volume:44 Page:993-1003
ISSN:0302-0738
Container-title:Journal de Physique
language:
Short-container-title:J. Phys. France

Author:

Abelson J.,de Rosny G.

Publisher

EDP Sciences

Link

http://jphys.journaldephysique.org/10.1051/jphys:01983004408099300/pdf

Reference14 articles.

1. Determination of the density of gap states: field effect and surface adsorption

2. Investigation of the density of localized states in a-Si using the field effect technique

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