Trapping in hydrogenated amorphous silicon studied by dual-beam modulated photoconductivity
Author:
Affiliation:
1. a Group des Matériaux Amorphes, LPCR (Unité associée au CNRS 75) Bâtiment 490 , Université Paris-Sud , 91405 , Orsay , France
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642818908211184
Reference24 articles.
1. Gap states in undoped amorphous silicon studied by below-gap modulated photocurrent spectroscopy
2. Dual-beam-modulated photoconductivity in hydrogenated amorphous silicon response-time and drift-mobility measurements
3. Density-of-states distribution in the mobility gap of a-Si:H
4. The thermal quenching and supralinearity of photoconductivity in hydrogenated amorphous silicon
5. Low temperature photoconductivity in a-Si:H films
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1. Modulated Dual-Beam Photoconductivity in Hot-Pressured a-As2Se3;Acta Physica Polonica A;2020-09
2. Photoconductivity in hydrogenated amorphous silicon. I. Thermal emission and hopping of trapped charges;Philosophical Magazine B;1993-06
3. Light intensity dependence of the photoconductivity of hydrogenated amorphous silicon;Philosophical Magazine B;1991-05
4. Trapping and recombination in amorphous hydrogenated silicon studied by dual-beam-modulated photoconductivity;Philosophical Magazine B;1990-03
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