Light intensity dependence of the photoconductivity of hydrogenated amorphous silicon-Reference-Cited by-同舟云学术

Light intensity dependence of the photoconductivity of hydrogenated amorphous silicon

Published:1991-05 Issue:5 Volume:63 Page:1015-1030
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Almeriouh Y.¹,Bullot J.¹,Cordier P.¹,Gauthier M.¹,Mawawa G.¹

Affiliation:

1. a Groupe des Matériaux Amorphes , LPCR (Unité associée au CNRS 75), Bǎtiment 490, Université Paris-Sud, 91405 , Orsay , France

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642819108207581

Reference33 articles.

1. Gap states in undoped amorphous silicon studied by below-gap modulated photocurrent spectroscopy

2. Photoconductivity and recombination in doped amorphous silicon

3. Dual-beam-modulated photoconductivity in hydrogenated amorphous silicon response-time and drift-mobility measurements

4. Carius , R. Fuhs , W. and Weber , K. 1987. Disordered Semiconductors, Edited by: Kastner , M. A. Thomas , G. A. and Ovshinsky , S. R. 357New York: Plenum.

5. Spin-dependent hole diffusion in a-Si: H

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1. Intensity and temperature dependence of photocurrent of a-Si:H Schottky diodes;Current Applied Physics;2006-01

2. Light-intensity dependence of the steady-state photoconductivity used to estimate the density of states in the gap of intrinsic semiconductors;Thin Solid Films;2005-12

3. Determination of recombination and photogeneration parameters of a-Si:H using photoconductivity measurements;Thin Solid Films;1996-09

4. Photoconductivity of amorphous hydrogenated carbon films prepared by plasma CVD of acetylene;Vacuum;1996-09

5. On thermal quenching of the photoconductivity in hydrogenated amorphous silicon;Philosophical Magazine B;1995-07