Trapping and recombination in amorphous hydrogenated silicon studied by dual-beam-modulated photoconductivity
Author:
Affiliation:
1. a Groupe des Matériaux Amorphes , LPCR, Unité associée au CNRS 75 , Bǎtiment 490, Université Paris-Sud, 91405 , Orsay , France
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642819008208644
Reference25 articles.
1. Gap states in undoped amorphous silicon studied by below-gap modulated photocurrent spectroscopy
2. Steady-state photoconductivity and recombination process in sputtered hydrogenated amorphous silicon
3. Dual-beam-modulated photoconductivity in hydrogenated amorphous silicon response-time and drift-mobility measurements
4. Trapping in hydrogenated amorphous silicon studied by dual-beam modulated photoconductivity
5. Recombination processes ina-Si:H: Spin-dependent photoconductivity
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1. Photoconductivity of amorphous hydrogenated carbon films prepared by plasma CVD of acetylene;Vacuum;1996-09
2. Photoconductivity in hydrogenated amorphous silicon. II. Relaxation of trapped charge carriers;Philosophical Magazine B;1993-06
3. Photoconductivity in hydrogenated amorphous silicon. I. Thermal emission and hopping of trapped charges;Philosophical Magazine B;1993-06
4. Light intensity dependence of the photoconductivity of hydrogenated amorphous silicon;Philosophical Magazine B;1991-05
5. Dual beam modulated photoconductivity: A kinetic analysis;Journal of Non-Crystalline Solids;1991-01
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