The metal-insulator transition induced by a magnetic field
Author:
Affiliation:
1. a AT&T Bell Laboratories , Murray Hill , New Jersey , 07974 , U.S.A.
2. b Harvard University , Cambridge , Massachusetts , 02138 , U.S.A.
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642818708215302
Reference21 articles.
1. Scaling Theory of Localization: Absence of Quantum Diffusion in Two Dimensions
2. Observation of the Approach to a Polarization Catastrophe
3. Fermi-liquid theory of interacting disordered systems and the scaling theory of the metal-insulator transition
4. Dielectric Anomaly and the Metal-Insulator Transition inn-Type Silicon
5. Coulomb Interaction In Disordered Systems With Localized Electronic States
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1. Strain-Induced MI Transition in n-Si and n-Ge: Physical Mechanisms and Transport Phenomena;physica status solidi (b);2001-01
2. Metal-Insulator Transition in Degenerately Doped Si and Ge under High Uniaxial Pressure;physica status solidi (b);1996-11-01
3. Magnetic-Field-Induced Metal-Insulator Transitions in Multiple-Quantum-Well Structures;Physical Review Letters;1995-07-31
4. Anderson Transition in Three-Dimensional Systems in Strong Magnetic Fields;Journal of the Physical Society of Japan;1993-01-15
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