Magnetic-Field-Induced Metal-Insulator Transitions in Multiple-Quantum-Well Structures
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.75.906/fulltext
Reference19 articles.
1. Observation of a metallic impurity band inn-type GaAs
2. The metal-insulator transition induced by a magnetic field
3. Optical evidence for the impurity band nature of the metal-insulator transition in GaAs
4. Magnetotransport near the metal-insulator transition inCd0.6Mn0.4Se
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1. Low temperature terahertz spectroscopy of n-InSb through a magnetic field driven metal-insulator transition;Applied Physics Letters;2006-09-18
2. The bound states of D−centres in a quantum well in the presence of an applied high magnetic field;Journal of Physics: Condensed Matter;2006-04-25
3. Terahertz magneto-photoconductive characterization of hydrogenic barrier donors in GaAs/AlGaAs epitaxial thin films;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004
4. DC- and AC-scaling of the integer quantum Hall effect in the presence of interactions;Europhysics Letters (EPL);2000-02-15
5. Spectral Properties of Three-Dimensional Layered Quantum Hall Systems;Journal of the Physical Society of Japan;1998-12-15
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