Numerical evaluation of the critical behavior at the metal-insulator transition in a magnetic field-Reference-Cited by-同舟云学术

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Numerical evaluation of the critical behavior at the metal-insulator transition in a magnetic field

Published:1992-02 Issue:6 Volume:81 Page:477-480
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Ohtsuki T.,Kramer B.,Ono Y.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference42 articles.

1. Proceedings of the workshop on “Anderson Transition and Mesoscopic Fluctuations”,1990

2. Localizetion, Interaction, and Transport;Wegner,1985

3. The Anderson transition in a magnetic field experimental evidence for a new phase diagram

4. Magnetic Tuning of the Metal-Insulator Transition for Uncompensated Arsenic-Doped Silicon

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1. Electron correlation effects at variable-range hopping in doped GaAs, CdTe, Ge and Si;Philosophical Magazine B;2001-09

2. Influence of disorder in compensation-doped germanium on the critical indices of the metal-insulator transition;Physics of the Solid State;1999-05

3. Electrical properties of isotopically enriched neutron-transmutation-doped70Ge:Ganear the metal-insulator transition;Physical Review B;1998-10-15

4. Hopping Conduction and Metal-Insulator Transition in Isotopically Enriched Neutron-Transmutation-Doped70Ge:Ga;Physical Review Letters;1996-11-04

5. Integer quantum Hall effect in double-layer systems;Physical Review B;1996-10-15

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