Metal-Insulator Transition in Degenerately Doped Si and Ge under High Uniaxial Pressure

Author:

Baidakov V. V.,Ermakov V. N.,Gorin A. E.,Kolomoets V. V.,Stuchinska N. V.,Shenderovskii V. A.,Tunstall D. P.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Metal-Insulator Transitions, Taylor and Francis, London 1974.

2. , , and , in: Proc. 20th Internat. Conf. Phys. Semicond. (ICPS-20), Thessaloniki (Greece), Ed. and , Word Scientific Publ. Co., Singapore 1990, Vol. 3 (p. 1803).

3. The non-parabolicity of the n-Si conduction band caused by elastic deformation along the [111] direction

4. Breakdown of Impurity States of As and Sb in Germanium at Uniaxial Compression

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