Correlated increase ofɛ2- andɛ1-conductivity energies under strain-induced metal–insulator transition in n-Ge(Sb)-Reference-Cited by-同舟云学术

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Correlated increase ofɛ2- andɛ1-conductivity energies under strain-induced metal–insulator transition in n-Ge(Sb)

Published:2004-11 Issue:14 Volume:241 Page:3210-3214
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:phys. stat. sol. (b)

Author:

Budzulyak S. I.,Gorin A. E.,Ermakov V. M.,Kolomoets V. V.,Machulin V. F.,Suss B. B.,Venger E. F.,Bigoja O. D.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Metal–insulator transitions (Taylor and Francis, London, 1974).

2. Universality aspects of the metal-nonmetal transition in condensed media

3. Stress Tuning of the Metal-Insulator Transition at Millikelvin Temperatures

4. Electron Spin Resonance Experiments on Donors in Silicon. III. Investigation of Excited States by the Application of Uniaxial Stress and Their Importance in Relaxation Processes

5. Metal-Insulator Transition in Degenerately Doped Si and Ge under High Uniaxial Pressure

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Application of high uniaxial strain methods for semiconductor parameter determination;Physica B: Condensed Matter;2013-05

2. Strain-induced nonlinear behavior of electron effective mass in degenerately doped n-Si(P) under high uniaxial pressureX|| [111];physica status solidi (b);2009-03

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