Author:
Shenderovskii Vasyl,Baidakov Valentyn,Budsuliak Sergii,Gorin Andrii,Ermakov Valerii,Kolomoets Volodymyr,Liarokapis Efthymios,Gromova Galina,Kazbekova B.,Taimuratova L.
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. Cyclotron Resonance in Uniaxially Stressed Silicon. II. Nature of the Covalent Bond
2. The non-parabolicity of the n-Si conduction band caused by elastic deformation along the [111] direction
3. V. N. Ermakov, V. V. Kolomoets, L. I. Panasjuk, and V. E. Rodionov, in: Proc. of 20th Intern. Confer. on the Physis of Semiconductors (ICPS-20), Thessaloniki, Greece, edited by E. M. Anastasakis and J. D. Joannopoulos (World Scientific Publ. Co., Singapore, 1990), Vol. 3, p. 1803.
4. Stress Tuning of the Metal-Insulator Transition at Millikelvin Temperatures
5. Strain-Induced MI Transition in n-Si and n-Ge: Physical Mechanisms and Transport Phenomena
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Longitudinal magnetoresistance of uniaxially deformed n-type silicon;Bulletin of the Karaganda University. "Physics" Series;2022-06-30