Substitutional and interstitial doping of amorphous silicon nitride-Reference-Cited by-同舟云学术

Substitutional and interstitial doping of amorphous silicon nitride

Published:1988-04 Issue:4 Volume:57 Page:483-492
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Dunnett B.¹,Le Comber P. G.¹,Spear W. E.¹

Affiliation:

1. a Carnegie Laboratory of Physics , University of Dundee , Dundee , Scotland

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642818808208499

Reference17 articles.

1. Le Allan , D. and Spear , W. E. 1977. Proceedings of the 7th International Conference on Amorphous and Liquid Semiconductors, Edited by: Spear , W. E. 323Edinburgh: Centre for Industrial Consultancy and Liaison, University of Edinburgh.

2. Doping effects in off‐stoichiometric glow discharge amorphous silicon nitride

3. Electrical and optical properties of amorphous SixN1−x

4. The effects of linear strain on the electronic properties of glow discharge amorphous silicon

5. Properties of amorphous semiconductinga−Si:Ha−SiNx:Hmultilayer films and ofa−SiNx:Halloys

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1. Compositional, optoelectronic and structural properties of amorphous silicon-nitrogen alloys deposited by plasma enhanced chemical vapor deposition;Journal of Non-Crystalline Solids;1996-05

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3. Light-induced metastable changes in amorphous silicon nitride;Philosophical Magazine B;1994-02

4. Some electrical properties of amorphous silicon/amorphous silicon nitride interfaces: Top nitride and bottom nitride configurations in MNS and TFT devices;Journal of Applied Physics;1992-05-15

5. A spectroscopic investigation of growth regimes in silane-ammonia discharges used for plasma nitride deposition;Plasma Chemistry and Plasma Processing;1991-12